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VN10LF - N-Channel Enhancement Mode Vertical DMOS FET

Key Features

  • 60 Volt VDS.
  • RDS(on)=5Ω w . D at aS D G w.

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Other Datasheets by Zetex (now Diodes Incorporated)

Part Number Description
VN10LP N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET w VN10LF S w ISSUE 2 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=5Ω w .D at aS D G w PARTMARKING DETAIL – MY he ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current (1) SYMBOL BV DSS MIN. 60 TYP. MAX. UNIT V 2.5 V nA CONDITIONS. I D=100 µ A, V GS=0V I D =1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=60 V, V GS=0V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.