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ZHCS756 - SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT

Datasheet Summary

Features

  • Low V F.
  • High Current Capability.

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Datasheet Details

Part number ZHCS756
Manufacturer Zetex Semiconductors
File Size 161.95 KB
Description SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
Datasheet download datasheet ZHCS756 Datasheet
Additional preview pages of the ZHCS756 datasheet.

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Full PDF Text Transcription

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SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- NOVEMBER 1997 FEATURES: • Low V F • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA PARTMARK DETAIL: S76 7 1 ZHCS756 C 1 A 3 2 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage @ IF = 750mA Average Peak Forward Current; D.C. = 50% Non Repetitive Forward Current t ≤100 µs t≤10ms Power Dissipation at Tamb= 25° C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 750 610 1500 12 5 500 -55 to + 150 125 UNIT V mA mV mA A A mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN.
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