ZTX325 Datasheet | Zetex Semiconductors

FEATURES - High f T, 1.3GHz - Low noise < 5d B at 500MHz - Power output at 500MHz >175m W ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Mean Collector Current (Averaged over 100µs) Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IAV ICM Ptot Tj:Tstg 30 15 2.5 25 50 350 E-Line TO92 patible VALUE UNIT V V V m A m A m W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Static Forward Current Transfer Ratio Transition Frequency Capacitance, Collector Depletion Layer Capacitance, Emitter Depletion Layer Feedback Capacitance Feedback Time Constant SYMBOL VCEO(SUS) V(BR)EBO ICBO ICES h FE f T CTC CTE -Cre rbb’Cb’c 2.0 3-161 0.85 12 25 20 1.0 1.3 1.5 2.0 MIN. 15 5 10 10 150 125 GHz GHz p F p F p F ps TYP. MAX. UNIT V V n A µA CONDITIONS. IC=10m A, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VCE=15V, VBE=0 IC=2m A, VCE=1V- IC=25m A, VCE=1V- IC=2m A, VCE=5V, f=400MHz IC=25m A, VCE=5V, f=400MHz VCB=10V, IE=Ie=0, f=1MHz VEB=0.5V, IC=Ic=0, f=1MHz VCE=5V, IC=2m A, f=1MHz VCB=5V, -IE=2m A, f=10.7MHz ELECTRICAL CHARACTERISTICS PARAMETER Noise Figure Intermodulation Distortion Output Power (at Tcase=25°C)- SYMBOL N dim -53 MIN. TYP. MAX. UNIT 5.0 d B d B CONDITIONS. f=500MHz, VCE=5V, IC=2m A, RS=50Ω IC=14m A, VCE=6V, f=217MHz V0=100m V, RL=37.5Ω, f1=183MHz, f2=200MHz VCE=13.5V, IC=22.5m A Pin=25m W, f=500MHz 175 m W - It is essential that care be taken to reduce steady state current when no h.f. signal is applied. TYPICAL CHARACTERISTICS 80 f=400MHz 2 VCE=10V 1 VCE=5V h FE - Normalised Gain 3 f T - (GHz) VCE=10V 1µ 10µ 100µ 1m 10m 100m...