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ZTX325 - NPN SILICON PLANAR RF TRANSISTOR

Key Features

  • High fT, 1.3GHz.
  • Low noise < 5dB at 500MHz.
  • Power output at 500MHz >175mW ZTX325 C B.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR RF TRANSISTOR ISSUE 2 – MARCH 94 FEATURES * High fT, 1.3GHz * Low noise < 5dB at 500MHz * Power output at 500MHz >175mW ZTX325 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Mean Collector Current (Averaged over 100µs) Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IAV ICM Ptot Tj:Tstg 30 15 2.5 25 50 350 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW °C E -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).