ZTX327 Datasheet | Zetex Semiconductors

NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR ISSUE 2 – MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VCER VEBO IC Ptot Tj:Tstg 55 30 55 3.5 E-Line TO92 patible VALUE UNIT V V V V m A W °C 400 1.5 -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Static Forward Current Transfer Transitional Frequency Output Capacitance R.F. power output Efficiency SYMBOL V(BR)CBO V(BR)CEO(sus) V(BR)CER(sus) V(BR)EBO ICEO VCE(SAT) h FE f T Cobo POUT η MIN. 55 30 55 3.5 TYP. MAX. UNIT V V CONDITIONS. IC=100µ A, IE=0 IC=5m A, IB=0 IC=5m A, RBE=10Ω V 20 1.0 µA IE=100µ A,IC=0 VCB=45V IC=100m A, IB.=20m A IC=50m A, VCE=5V 15 500 800 3.0 350 50 440 70 MHz p F m W % IC=25m A, VCE=15V f=100MHz VCE=15V, IC=25m A f=100MHz VCC=12V, PIN=80m W f=400MHz PAGE...