ZTX337C Datasheet | Zetex Semiconductors

.. NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 50 45 5 E-Line TO92 patible VALUE UNIT V V V m A m A m W °C 100 800 750 -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn On Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)EBO ICBO VCE(sat) VBE(on) 250 170 200 12 50 45 5 100 0.7 1.2 630 MHz p F TYP. MAX. UNIT V V V n A V V CONDITIONS. IC=100µ A IC=100µ A IE=100µ A VCB=45V, IE=0 IC=500m A, IB=50m A- IC=300m A,VCE=1V- IC=100m A, VCE=1V- IC=300m A, VCE=1V- IC=10m A, VCE=5V f=50MHz VCB=10V, f=1MHz Static Forward Current h FE Transfer Transition Frequency Output Capacitance f T Cobo - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%...