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ZTX614 - NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Key Features

  • 100 Volt VCEO.
  • 800 mA continuous current.
  • Gain of 10K at IC=500mA.
  • Ptot=1 Watt ZTX614 C B E REFER TO BCX38 FOR GRAPHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – APRIL 94 FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot=1 Watt ZTX614 C B E REFER TO BCX38 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 120 100 10 800 1.0 5.7 E-line TO92 Compatible VALUE UNIT V V V mA W mW/ °C °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN.