ZTX614
ZTX614 is NPN Darlington Transistor manufactured by Fairchild Semiconductor.
NPN Darlington Transistor
- These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage.
- Sourced from process 06.
C BE
TO-226
Absolute Maximum Ratings- TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Operating and Storage Junction Temperature Range Value 100 120 10 800 -55 ~ +150 Units V V V m A °C
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition IC = 10m A, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 60V, IE = 0 VEB = 8V, IC = 0 IC = 100m A, VCE = 5V IC = 500m A, VCE = 5V IC = 800m A, IB = 8m A IC = 800m A, VBE = 5V 5000 10000 1.25 1.8 V V Min. 100 120 10 0.1 0.1 µA µA Typ. Max. Units V V Off Characteristics Collector-Emitter Breakdown Voltage- V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO h FE VCE(sat) VBE(on) Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage
On Characteristics-
- Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 1000 8 50 125 Units m W m W/°C °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
Package Dimensions
TO-226
S4.70-4.32; S1.52-1.02;
2" TYP
S7.87-7.37;
S7.73-7.10;
S1.65-1.27;
2"...
