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ZTX614 - NPN Darlington Transistor

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ZTX614 ZTX614 NPN Darlington Transistor • These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. • Sourced from process 06. C BE TO-226 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 100 120 10 800 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits.