ZTX614 Datasheet
ZTX614 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
ZTX614 ZTX614 NPN Darlington Transistor • These device is designed for applications requiring extremely high gain at collector currents to 0.5A and high breakdown voltage. • Sourced from process 06. .
VEB = 8V, IC = 0 IC = 100mA, VCE = 5V IC = 500mA, VCE = 5V IC = 800mA, IB = 8mA IC = 800mA, VBE = 5V 5000 10000 1.25 1.8 V V Min. 100 120 10 0.1 0.1 µA µA Typ. Max. Units V V Off Characteristics Collector-Emitter Breakdown Voltage* V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) Collector-.
ZTX614 Datasheet (Zetex Semiconductors)
Zetex Semiconductors
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot=1 Watt ZTX614 C B E REFER TO BCX38 FO.
* 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot=1 Watt ZTX614 C B E REFER TO BCX38 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C derate.