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ZTX618 - NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Key Features

  • 10A Peak pulse current.
  • Excellent hFE characteristics up to10A (pulsed).
  • Extremely low saturation voltage e. g. 7mV typ.
  • IC cont 3.5A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 – JULY 1995 FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A (pulsed) * Extremely low saturation voltage e.g. 7mV typ. * IC cont 3.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX718 ZTX618 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Practical Power Dissipation* Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptotp Ptot Tj:Tstg VALUE 20 20 5 10 3.5 500 1.5 1 -55 to +200 UNIT V V V A A mA W W °C * Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.