ZVN0545A Datasheet | Zetex Semiconductors

FEATURES - 450 Volts VDS - RDS(on)= 50Ω E-Line TO92 patible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 450 90 600 ± 20 700 -55 to +150 UNIT V m A m A V m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) mon Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 450 1 3 20 10 400 150 50 100 70 10 4 7 7 16 10 MAX. UNIT CONDITIONS. V V n A µA µA m A Ω m S p F p F p F ns ns ns ns ( 1 V DD ≈ 25V, I D=100m A V DS=25 V, V GS=0V, f=1MHz I D=1m A, V GS=0V ID=1m A, V DS= V GS V GS= ± 20V, V DS=0V V DS=450 V, V GS=0 V DS=405 V, V GS=0V, T=125°C (2) V DS=25 V, V GS=10V V GS=10V,I D=100m A V DS=25V,I D=100m A I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off)...