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ZVN0545G - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 450 Volts VDS.
  • RDS(on)= 50Ω.
  • Ease of paralleling 7 ZVN0545G D S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 FEATURES * 450 Volts VDS * RDS(on)= 50Ω * Ease of paralleling 7 ZVN0545G D S PARTMARKING DETAIL – ZVN0545 G D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot Tj :T stg VALUE 450 140 600 ± 20 2 -55 to +150 UNIT V mA mA V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).