ZVN0545G Datasheet and Specifications PDF

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - DECEMBER 1995 FEATURES * 450 Volts VDS * RDS(on)= 50Ω * Ease of paralleling 7 ZVN0545G D S PARTMARKING DETAIL – ZVN0545 G D ABSOLUTE MA.

* 450 Volts VDS * RDS(on)= 50Ω * Ease of paralleling 7 ZVN0545G D S PARTMARKING DETAIL
* ZVN0545 G D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Tempe.

and Applications This MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for highefficiency power-management applications. Features an.

and Benefits
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please.