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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available
ZVN4310A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Practical Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Practical Power Dissipation at T amb=25°C* Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp T j :T stg VALUE 100 0.9 1 12 ± 20 850 1.13 -55 to +150 UNIT V A A A V mW W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.