ZVN4310G - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex (now Diodes Incorporated)

Key Features

Very low RDS(ON) = .54Ω.

ZVN4310G n-channel enhancement mode vertical dmos fet by Zetex (now Diodes Incorporated) - Datasheet Preview

Datasheet Details

Part number	ZVN4310G
Manufacturer	Zetex (now Diodes Incorporated)
File Size	34.97 KB
Description	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Datasheet	ZVN4310G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - FEBRUARY 1996 FEATURES * Very low RDS(ON) = .54Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive PARTMARKING DETAIL ZVN4310 ZVN4310G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg TYP. MAX. VALUE 100 1.67 12 ± 20 3 -55 to +150 UNIT V A A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. 100 BVDSS VGS(th) IGSS IDSS 9 0.4 0.5 0.