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ZVP2120G - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 200 Volt VDS.
  • RDS(on)=25Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS(on)=25Ω PARTMARKING DETAIL – COMPLEMENTARY TYPE – 7 ZVP2120G D ZVP2120 ZVN2120G G S D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -200 -200 -1.2 ± 20 UNIT V mA A V W °C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 50 100 25 7 7 15 12 15 -300 25 -200 -1.5 -3.