ZVP2120G Datasheet | Zetex Semiconductors

FEATURES - 200 Volt VDS - RDS(on)=25Ω PARTMARKING DETAIL – PLEMENTARY TYPE – 7 ZVP2120 ZVN2120G G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -200 -200 -1.2 ± 20 UNIT V m A A V W °C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 50 100 25 7 7 15 12 15 -300 25 -200 -1.5 -3.5 -20 -10 -100 V V n A µA µA Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) mon Source Output Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) ID=-1m A, VGS=0V ID=-1m A, VDS= VGS VGS=± 20V, VDS=0V VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C (2) m A Ω VDS=-25 V, VGS=-10V VGS=-10V, ID=-150m A VDS=-25V, ID=-150m A m S p F p F p F ns ns ns ns VDS=-25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss td(on) tr td(off) tf VDD ≈ -25V, ID=-150m A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 431 TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VGS= -10V -8V -7V -6V -0.4 -0.4 VGS= -10V -8V -7V -6V -0.6 -0.3 -5V -0.2 -4.5V -0.1 -4V -3.5V 0 0 -2 -4 -6 -8 -10 -5V -0.2 -4.5V -4V 0 0 -20 -40 -60 -80 -3.5V -100 - Drain Source Voltage (Volts) - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) -20 VDS-Drain Source Voltage (Volts) -18 -16 -14...