ZVP3306A Datasheet | Zetex Semiconductors

FEATURES - 60 Volt VDS - RDS(on)=14Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -60 E-Line TO92 patible VALUE -160 -1.6 ± 20 UNIT V m A A V m W °C 625 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -400 14 60 50 25 8 8 8 8 8 -60 -1.5 -3.5 20 -0.5 -50 MAX. UNIT CONDITIONS. V V n A µA µA ID=-1m A, VGS=0V ID=-1m A, VDS= VGS VGS=± 20V, VDS=0V VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125°C(2) VDS=-18 V, VGS=-10V VGS=-10V,ID=-200m A VDS=-18V,ID=-200m A m A Ω Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) mon Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf m S p F p F p F ns ns ns ns VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-200m A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-429 Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator ( 3 ) TYPICAL CHARACTERISTICS -1.2 -1.0 VGS=-20V -16V -14V -0.8 -0.6 -0.4 -7V -0.2 0 0 -10 -20 -30 -40 -50 -6V -5V -4V -12V -10V -9V -8V -1.0 VGS= -16V -14V -0.8 -12V -0.6 -10V -9V -8V -7V -0.2 -6V -5V -4.5V 0 -2 -4 -6 -8 -10 - Drain Current (Amps) - Drain Current (Amps) -0.4 - Drain Source Voltage (Volts) - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -10 -8 ID= -400m A -1.0 -0.8 VDS=-10V -0.6 -6 -4...