ZVP3306F Datasheet | Zetex Semiconductors

FEATURES - 60 Volt VDS - RDS(on)=14Ω PARTMARKING DETAIL – ML PLEMENTARY TYPE – ZVN3306F ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -60 -90 -1.6 ± 20 SOT23 UNIT V m A A V m W °C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 60 50 25 8 8 8 8 8 -400 14 -60 -1.5 -3.5 20 -0.5 -50 V V n A µA µA Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) mon Source Output Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) ID=-1m A, VGS=0V ID=-1m A, VDS= VGS VGS=± 20V, VDS=0V VDS=-60 V, VGS=0V VDS=-48 V, VGS=0V, T=125°C(2) VDS=-18 V, VGS=-10V VGS=-10V, ID=-200m A VDS=-18V, ID=-200m A m A Ω m S p F p F p F ns ns ns ns VDS=-18V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss td(on) tr td(off) tf VDD ≈ -18V, ID=-200m A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 -434 TYPICAL CHARACTERISTICS -10 -1.0 - Drain Current (Amps) -8 ID= -400m A -0.8 VGS= -16V -14V -12V -6 -0.6 -10V -9V -8V -7V -6V -5V -4.5V 0 -2 -4 -6 -8 -10 Drain Source -4 -0.4 -2 -200m A -100m A 0 -2 -4 -6 -8 -10 -0.2 VGS-Gate Source Voltage...