ZVP3310F Datasheet | Zetex Semiconductors

FEATURES - 100 Volt VDS - RDS(on)=20Ω PLEMENTARY TYPE PARTMARKING DETAIL 7 ZVN3310F MR ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -300 20 50 50 15 5 8 8 8 8 -100 -1.5 -3.5 -20 -1 -50 SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -100 75 -1.2 ± 20 UNIT V m A A V m W °C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). MAX. UNIT CONDITIONS. V V n A µA µA ID=-1m A, VGS=0V ID=-1m A, VDS= VGS VGS=± 20V, VDS=0V VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125°C(2) VDS=-25 V, VGS=-10V VGS=-10V, ID=-150m A VDS=-25V, ID=-150m A m A Ω Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) mon Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf m S p F p F p F ns ns ns ns VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150m A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3 - 436 TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -10 -0.6 - Drain Current (Amps) -8 -0.4 -6 -0.2 Drain Source -7V -6V -5V -4 ID= -0.3A -0.15A -0.075A -2 0 -2 -4 -6 -8 -4V -10 0 0 -2 -4 -6 -8...