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ZXM41N10F - N-Channel MOSFET

Key Features

  • BVDSS = 100V.
  • Low Threshold DEVICE.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb =25°C Pulsed drain current Gate-source voltage Power dissipation at T amb =25°C Operating and storage temperature range www.DataSheet4U.