ZXM63N03X Datasheet | Zetex Semiconductors

DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that bines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES - Low on-resistance - Fast switching speed - Low threshold - Low gate drive - Low profile SOIC package .. D2 D1 APPLICATIONS - DC - DC converters - Power management functions - Disconnect switches - Motor control G2 S2 G1 S1 Pin-out ORDERING INFORMATION DEVICE ZXM63N03NXTA ZXM63N03NXTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12 embossed 12 embossed QUANTITY PER REEL 1,000 4,000 S1 G1 S2 G2 D1 D1 D2 D2 Top view DEVICE MARKING ZXM63N03 ISSUE 1 - OCTOBER 2005 1 SEMICONDUCTORS ZXMD63N03X ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS =4.5V; T A =25°C)(b)(d) I D (V GS =4.5V; T A =70°C)(b)(d) Pulsed Drain Current (c)(d) I DM Continuous Source Current (Body Diode)(b)(d) IS Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (a)(e) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range I SM PD PD PD T j :T stg 2.3 1.8 14 1.5 14 0.87 6.9 1.04 8.3 1.25 10 -55 to +150 A A A A W m W/°C W m W/°C W m W/°C °C SYMBOL V DSS V GS LIMIT 30 ±20 UNIT V V THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(d) Junction to Ambient (a)(e) SYMBOL R θ JA R θ JA R θ JA VALUE 143 100 120 UNIT °C/W °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t р10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with...