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ZXMN10A25G - N-Channel MOSFET

General Description

This new generation trench MOSFET from Zetex

Key Features

  • a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 100 RDS(on) (⍀) 0.125 @ VGS= 10V 0.150 @ VGS= 6V ID (A) 4 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • • • www.DataSheet4U.com D Low on-resistance Fast switching speed Low gate drive SOT223 package G S • Applications • • • • DC-DC converters Power management functions Disconnect switches Motor control S D D G Ordering information Device ZXMN10A25GTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 Pinout - top view Device marking ZXMN 10A25 Issue 1 - July 2006 © Zetex Semiconductors plc 2006 1 www.