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ZXMN10B08E6 - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.

Key Features

  • Low on-resistance.
  • Fast switching speed.
  • Low threshold.
  • Low gate drive.
  • SOT23-6 package www. DataSheet4U. com SOT23-6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 DESCRIPTION ID = 1.9A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package www.DataSheet4U.