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ZXMN2088DE6 - 20V Dual SOT23-6 N-channel enhancement mode MOSFET

General Description

This new generation dual n-channel trench MOSFET from Zetex

Key Features

  • low on-resistance achievable with low gate drive. Features.
  • Low on-resistance Low gate drive capability SOT23-6 (dual) package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (Ω) 0.200 @ VGS= 4.5V ID (A) 2.1 1.9 1.7 20 0.240 @ VGS= 2.5V 0.310 @ VGS= 1.8V Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance achievable with low gate drive. Features • • • Low on-resistance Low gate drive capability SOT23-6 (dual) package Applications • • • Power Management functions Disconnect switches Relay driving and load switching www.DataSheet4U.com Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel G1 S2 G2 Pinout – top view D1 S1 D2 ZXMN2088DE6TA Device marking 2088 7 8 3,000 Issue 2 - June 2008 © Diodes Incorporated 2008 1 www.zetex.com www.diodes.