ZXMN2B01F Datasheet | Zetex Semiconductors

Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive. Features - - .. Low on-resistance Fast switching speed Low gate drive capability SOT23 package - - Applications - - - - DC-DC converters Power management functions Disconnect switches Motor control Ordering information Device ZXMN2B01FTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel Top view 3,000 Device marking 2B1 Issue 2 - March 2007 © Zetex Semiconductors plc 2007 .zetex. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 4.5V; Tamb=25°C(b) @ VGS= 4.5V; Tamb=70°C(b) @ VGS= 4.5V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 20 ±8 2.4 1.9 2.1 11.8 1.4 11.8 625 5 806 6.4 -55 to +150 Unit V V A A A A A A m W m W/°C m W m W/°C °C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R⍜JA R⍜JA Limit 200 155 Unit °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t Յ5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 .zetex. Thermal characteristics Issue 2 - March 2007 © Zetex Semiconductors plc...