ZXMN2B14FH
ZXMN2B14FH is SOT23 N-channel enhancement mode MOSFET manufactured by Zetex Semiconductors.
Description
This new generation of trench MOSFETs from Zetex features low onresistance achievable with low gate drive.
Features
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Low on-resistance Fast switching speed Low gate drive capability SOT23 package
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Applications
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- - DC-DC converters Power management functions Disconnect switches Motor control
Ordering information
Device ZXMN2B14FHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel
Top view
3,000
Device marking
2B4
Issue 2
- March 2007
© Zetex Semiconductors plc 2007
.zetex.
Absolute maximum ratings
Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 4.5V; Tamb=25°C (b) @ VGS= 4.5V; Tamb=70°C (b) @ VGS= 4.5V; Tamb=25°C (a) Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at Tamb=25°C (a) Linear derating factor Power dissipation at Tamb =25°C (b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 20 ±8 4.3 3.5 3.5 21 2.4 21 1 8 1.5 12 -55 to +150 A A A W m W/°C W m W/°C °C Unit V V A
Thermal resistance
Parameter Junction to ambient Junction to ambient Symbol R⍜JA R⍜JA Limit 125 82 Unit °C/W °C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t Յ5 sec. (c) Repetitive rating
- 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s
- pulse width limited by maximum junction temperature.
Issue 2
- March 2007
© Zetex Semiconductors plc 2007
.zetex.
Thermal characteristics
Issue 2
- March 2007
© Zetex Semiconductors plc...