• Part: ZXMN6A09G
  • Description: 60V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Zetex Semiconductors
  • Size: 195.39 KB
Download ZXMN6A09G Datasheet PDF
Zetex Semiconductors
ZXMN6A09G
ZXMN6A09G is 60V N-Channel MOSFET manufactured by Zetex Semiconductors.
DESCRIPTION ID= 5.1A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that bines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES - Low on-resistance - Fast switching speed - Low threshold - Low gate drive - Low profile SOIC package SOT223 APPLICATIONS - DC - DC Converters - Power Management Functions - Relay and Solenoid driving - Motor control ORDERING INFORMATION DEVICE ZXMN6A09GTA ZXMN6A09GTC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING - ZXMN 6A09 Top View PROVISIONAL ISSUE D - SEPTEMBER 2003 1 SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; T A =25°C) (b) (V GS =10V; T A =70°C) (b) (V GS =10V; T A =25°C) (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 60 Ϯ20 6.9 5.6 5.0 30.6 3.5 30.6 2.0 16 3.9 31 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W m W/°C W m W/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient (a)(d) (b)(d) SYMBOL R θ JA R θ JA VALUE 62.5 32.2 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. PROVISIONAL ISSUE D - SEPTEMBER 2003 SEMICONDUCTORS CHARACTERISTICS...