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ZXMN6A09G - 60V N-CHANNEL MOSFET

General Description

This new generation trench MOSFET

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Voltage.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Low Gate Drive.
  • Low Threshold.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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ZXMN6A09G Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(on) 0.04Ω @ VGS = 10V 0.06Ω @ VGS = 4.5V ID TA = +25°C 7.5A 6.2A Description This new generation trench MOSFET features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Applications  DC-DC converters  Power management functions  Disconnect switches  Motor control Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Voltage  Low On-Resistance  Fast Switching Speed  Low Gate Drive  Low Threshold  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.