ZXMN6A09DN8 Datasheet | Zetex Semiconductors

Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that bines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features - Low on-resistance - Fast switching speed - Low threshold - Low gate drive - SOIC package D1 D2 G1 G2 S1 S2 Applications - DC-DC converters - Power management functions - Disconnect switches - Motor control Ordering information S1 D1 G1 D1 S2 D2 G2 D2 Top view Device ZXMN6A09DN8TA Reel size (inches) Tape width (mm) Quantity per reel Device marking ZXMN 6A09D Issue 6 - January 2007 © Zetex Semiconductors plc 2007 .zetex. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS=10V; Tamb=25°C(b) @ VGS=10V; Tamb=70°C(b) @ VGS=10V; Tamb=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb = 25°C(a)(d) Linear derating factor Power dissipation at Tamb = 25°C(b)(e) Linear derating factor Power dissipation at Tamb = 25°C(b)(d) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM...