ZXT13N50DE6 Datasheet | Zetex Semiconductors

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure bined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES - - - - - - - - - Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage h FE characterised up to 10A IC=4A Continuous Collector Current SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control ORDERING INFORMATION DEVICE ZXT13N50DE6TA ZXT13N50DE6TC DEVICE MARKING N50D REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units Top View 10000 units ISSUE 1 - NOVEMBER 1999 1 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 100 50 7.5 10 4 500 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V V A A m A W m W/°C W m W/°C °C T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 113 73 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр5 secs. ISSUE 1 - NOVEMBER 1999 2 TYPICAL CHARACTERISTICS Max Power Dissipation (W) IC Collector Current (A) 1.0 0.8 0.6 0.4 0.2 0.0 DC 1s 100ms 10ms 100m 1ms 100µs Single Pulse Tamb=25°C 10m...