ZXT13N50DE6 Datasheet and Specifications PDF

ADVANCE INFORMATION Features • BVCEO > 50V • IC = 4A Continuous Collector Current • ICM = 10A Peak Pulse Current • RCE(SAT) = 36mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (100mV m.

* BVCEO > 50V
* IC = 4A Continuous Collector Current
* ICM = 10A Peak Pulse Current
* RCE(SAT) = 36mΩ for a Low Equivalent On-Resistance
* Low Saturation Voltage (100mV max @ 1A)
* hFE Characterized up to 10A
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Gree.

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for hi.

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* Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=4A Continuous Collector Current SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control ORDERING INFORMATION DEVICE ZXT1.