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ZXTP2025F - PNP medium power transistor

General Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Key Features

  • Higher power dissipation SOT23 package High peak current Low saturation voltage High gain 50V forward blocking voltage.

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Full PDF Text Transcription for ZXTP2025F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ZXTP2025F. For precise diagrams, and layout, please refer to the original PDF.

ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V(BR)CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part numb...

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30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
DIODES Logo ZXTP2025F 50V PNP MEDIUM POWER TRANSISTOR DIODES

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