GENERAL DESCRIPTION
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) 100% UIS Tested 100% Rg Tested -30V -6A < 48mW < 57mW < 80mW SOIC-8 Top View Bottom View D D D D D G S S S G S ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C ID -6 -5 Pulsed Drain Current C IDM -30 Avalanche Current C IAS, IAR 18 Avalanche energy L=0.1mH C EAS, EAR 16 TA=25°C Power Dissipation B TA=70°C PD 3.1 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 7.1: March 2024 Page 1 of 5 AO4403 ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Parameter Conditions...
Alpha & Omega Semiconductors
