GENERAL DESCRIPTION
Product Summary VDS ID (at VGS=-20V) RDS(ON) (at VGS=-20V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-5V) * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested -30V -12A < 13mΩ < 14mΩ < 30mΩ Top View D D D D SOIC-8 Bottom View G S S S ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum -30 ±25 -12 -10 -60 26 101 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev.14.0: July 2013 Page 1 of 5 AO4407 ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise...