Datasheet4U.com

AO4407 Datasheet PDF

Alpha & Omega Semiconductors AO4407

The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Part No. AO4407
Datasheet AO4407 Download
Manufacturer
Alpha & Omega Semiconductors
Description P-Channel MOSFET
Buy Stock & Price
AO4407 datasheet page 1 preview

GENERAL DESCRIPTION

Product Summary VDS ID (at VGS=-20V) RDS(ON) (at VGS=-20V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-5V) * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested -30V -12A < 13mΩ < 14mΩ < 30mΩ Top View D D D D SOIC-8 Bottom View G S S S

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum -30 ±25 -12 -10 -60 26 101 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev.14.0: July 2013 Page 1 of 5 AO4407

ELECTRICAL CHARACTERISTICS

(TJ=25°C unless otherwise...
AO4407 page 2 preview AO4407 page 3 preview