Alpha & Omega Semiconductors AO4485
The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. The value in any given application depends on the user's specific board design.| Part No. | AO4485 |
|---|---|
| Datasheet | AO4485 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 40V P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary VDS (V) = -40V ID = -10A RDS(ON) < 15mΩ RDS(ON) < 20mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G S S S G SABSOLUTE MAXIMUM RATINGS
TJ=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.3mH G EAR -12 -10 -9 -8 -120 -28 118 Power Dissipation A TA=25°C TA=70°C 3.1 1.7 PD 2.0 1.1 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State RqJA 31 59 Maximum Junction-to-Lead C Steady State RqJL 16 Max 40 75 24 Units V V A mJ W °C Units °C/W °C/W °C/W Rev 1.1: March 2024 Page 1 of 4 AO4485ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Parameter Con...
