Alpha & Omega Semiconductors AO4496
The AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. The value in any given application depends on the user's specific board design.| Part No. | AO4496 |
|---|---|
| Datasheet | AO4496 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary VDS (V) = 30V ID = 10A RDS(ON) < 19.5mΩ RDS(ON) < 26mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G SABSOLUTE MAXIMUM RATINGS
TJ=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.1mH G EAR Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 10 7.5 50 17 14 3.1 2.0 -55 to 150 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State RqJA 31 59 40 75 Maximum Junction-to-Lead C Steady State RqJL 16 24 Units V V A mJ W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 Page 1 of 5 AO4496ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PA...
