Alpha & Omega Semiconductors AO4882
The AO4882 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.| Part No. | AO4882 |
|---|---|
| Datasheet | AO4882 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 40V Dual N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 8A < 19mΩ < 27mΩ Top View SOIC-8 Bottom View Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 Pin1ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 8 6 40 15 11 2 1.3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 48 74 Maximum Junction-to-Lead Steady-State RθJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0 : Dec 2011 Page 1 of 5 AO4882ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Mi...
