Kexin Electronics AO4882
Dual N-Channel MOSFET
FEATURES
● VDS (V) = 40V● ID = 8A (VGS = 10V)
● RDS(ON) < 19mΩ (VGS = 10V)
● RDS(ON) < 27mΩ (VGS = 4.5V) +0.040.21 -0.02 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 D1 D2 G1 G2 S1 S2
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAS EAS PD RthJA RthJL TJ Tstg Rating 40 ±20 8 6 40 15 11 2 1.3 62.5 90 40 150 -55 to 150 Unit V A mJ W ℃/W ℃ 1 SMD Type MOSFET Dual N-Channel MOSFET AO4882 (KO4882)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain C