AO4884 Overview
Key Specifications
Package: SOIC
Mount Type: Surface Mount
Pins: 8
Max Operating Temp: 150 °C
Description
SOP-8 GATE SOURCE DRAIN 8765 D2 D2 D1 D1 S2 G2 S1 G1 1234 D1 D2 G1 G2 S1 S2 Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current c Avalanche Current c Avalanche energy L=0.1mH c Power Dissipation B Junction and Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID IDM IAS, IAR EAS, EAR PD TJ, TSTG Rating 40 ±20 10 8 50 35 61 2 1.3 -55 to 150 Units V A mJ W °C UTD Semiconductor Co.,Limited Nov.2024 1 of 11 UMW AO4884 40V Dual N-Channel MOSFET Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A D Steady-State 48 62.5 °C/W 74 90 °C/W Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W 2 of 11 UTD Semiconductor Co.,Limited Nov.2024 UMW AO4884 40V Dual N-Channel MOSFET Characteristics (TJ=25°C unless otherwise noted) Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime.
