AO4884
AO4884 is 40V Dual N-Channel MOSFET manufactured by UMW.
Description
The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.
UMW AO4884
40V Dual N-Channel MOSFET
2.Features
VDS (V)=40V ID=10A(VGS=10V) RDS(ON)<13mΩ(VGS=10V) RDS(ON)<16mΩ(VGS=4.5V)
3.Pinning information
Pin 2,4 1,3 5,6,7,8
Symbol G2, G1 S2, S1 D1, D2
Description
SOP-8
GATE SOURCE
DRAIN
D2 D2 D1 D1
S2 G2 S1 G1
D1
D2
G1
G2
S1
S2
4.Absolute Maximum Ratings TA=25°C unless otherwise noted
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current c Avalanche Current c Avalanche energy L=0.1m H c
Power Dissipation B
Junction and Storage Temperature Range
TA=25°C TA=70°C
TA=25°C TA=70°C
Symbol VDS VGS
IDM IAS, IAR EAS, EAR
TJ, TSTG
Rating 40 ±20 10 8 50 35 61 2 1.3
-55 to 150
Units...
