AO4884
AO4884 is Dual N-Channel MOSFET manufactured by EVVO.
Description
The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
40V 10A < 13mΩ < 16mΩ
Dual N-Channel MOSFET
D1
D2
G1
G2
S1
S2
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1m H C
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Maximum 40 ±20 10 8 50 35 61 2 1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D...
