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AO4884 - Dual N-Channel MOSFET

General Description

The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This is an all purpose device that is suitable for use in a wide range of power conversion applications.

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Datasheet Details

Part number AO4884
Manufacturer EVVOSEMI
File Size 940.32 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO4884 Datasheet

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AO4884 General Description The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 40V 10A < 13mΩ < 16mΩ Dual N-Channel MOSFET D1 D2 G1 G2 S1 S2 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.