Datasheet Details
| Part number | AO4886 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 546.99 KB |
| Description | 100V Dual N-Channel MOSFET |
| Datasheet | AO4886-AlphaOmegaSemiconductors.pdf |
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Overview: AO4886 100V Dual N-Channel MOSFET General.
| Part number | AO4886 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 546.99 KB |
| Description | 100V Dual N-Channel MOSFET |
| Datasheet | AO4886-AlphaOmegaSemiconductors.pdf |
|
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The AO4886 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 100V 3.3A < 80mΩ < 91mΩ Top View SOIC-8 Bottom View Top View S2 1 8 G2 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 3.3 2.7 17 14 10 2.00 1.28 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 48 74 Maximum Junction-to-Lead Steady-State RθJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: Sep 2010 .aosmd.
Page 1 of 6 AO4886 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 2.2 2.7 V ID(ON) On state drain current VGS=10V, VDS=5V 17 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A TJ=125°C 63.5 80 mΩ 122 152 VGS=4.5V, ID=3A 70 91 mΩ gFS Forward Transconductance VDS=5V, ID=3A 20 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V IS Maximum Body-Diode Continuou
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4886 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4882 | 40V Dual N-Channel MOSFET |
| AO4884 | 40V Dual N-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |