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AO4886 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 100V.
  • ID = 3.3A (VGS = 10V).
  • RDS(ON) ＜ 80mΩ (VGS = 10V).
  • RDS(ON) ＜ 91mΩ (VGS = 4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 G1 D1 G2 S1 SOP-8 D2 S2 +0.040.21 -0.02 1.50 0.15.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current.
  • 1 Avalanche Current.
  • 1 Avalanche Energy L=0.1mH.
  • 1 Power Dissipation.
  • 2 TA=25℃ TA=70℃ Thermal R.

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SMD Type N-Channel Enhancement MOSFET AO4886 (KO4886) MOSFET ■ Features ● VDS (V) = 100V ● ID = 3.3A (VGS = 10V) ● RDS(ON) ＜ 80mΩ (VGS = 10V) ● RDS(ON) ＜ 91mΩ (VGS = 4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 G1 D1 G2 S1 SOP-8 D2 S2 +0.040.21 -0.02 1.50 0.15 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current *1 Avalanche Current *1 Avalanche Energy L=0.1mH *1 Power Dissipation *2 TA=25℃ TA=70℃ Thermal Resistance.Junction- to-Ambient *3 t≤10S Steady-State *4 Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAS,IAR EAS,EAR PD RthJA RthJC TJ Tstg Rating 100 ±20 3.3 2.7 17 14 10 2 1.28 62.