GENERAL DESCRIPTION
FEATURES
VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G S ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current Power Dissipation A B Units V V VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 1.6 1.0 -5 -3.7 ±12 -3.7 -3.2 -25 1.0 0.7 -55 to 150 A W °C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol t ≤ 10s Steady State Steady State RθJA RθJL Typ 58 94 37 Max 80 120 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6401A ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Conditions...