Alpha & Omega Semiconductors AON6200
The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.| Part No. | AON6200 |
|---|---|
| Datasheet | AON6200 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 24A < 7.8mΩ < 11mΩ 100% UIS Tested 100% Rg Tested Top View 1 2 3 4 8 7 6 5 D G S DFN5X6ABSOLUTE MAXIMUM RATINGS
TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 30 ±20 24 18 130 13 10 28 39 35 14 1.95 1.25 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA...
