AON6206 Datasheet PDF | Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AON6206

The AON6206 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.

Part No.	AON6206
Datasheet	AON6206 Download
Manufacturer	Alpha & Omega Semiconductors
Description	30V N-Channel MOSFET
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GENERAL DESCRIPTION

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 24A < 6.5mΩ < 9mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 24 19 150 20 16 30 45 31 12 4.2 2.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 25 55 3 Max 30 65 4 Rev 0: Nov. 2009 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Page 1 of 6 AON6206 Electric...