Alpha & Omega Semiconductors AOP605
The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.GENERAL DESCRIPTION
AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is Halogen FreeFEATURES
n-channel VDS (V) = 30V ID = 7.5A (VGS = 10V) p-channel -30V -6.6A (VGS = -10V) RDS(ON) < 28mΩ (VGS = 10V) < 35mΩ (VGS = -10V) < 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.5V) PDIP8 Top View Bottom View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 PDIP-8 D2 G2 S2 n-channel D1 G1 S1 p-channelABSOLUTE MAXIMUM RATINGS
T A=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM 7.5 6 30 Power Dissipation TA=25°C TA=70°C PD 2.5 1.6 Junction and Storage Temper