ark FTD04N60
600V N-Channel MOSFET
| Part No. | FTD04N60 |
|---|---|
| Datasheet | FTD04N60 Download |
| Manufacturer |  ark |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
¾ Low ON Resistance ¾ Low Gate Charge (typical 14.7nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant/Lead Free FTU04N60/FTD04N60 BVDSS 600V RDS(ON) (Max.) 2.8Ω ID 3.6AAPPLICATIONS
¾ High Efficiency SMPS ¾ Adaptor/Charger ¾ Active PFC ¾ LCD Panel Power Ordering Information Part Number Package FTU04N60 TO-251 FTD04N60 TO-252 Marking FTU04N60 FTD04N60ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL Parameter Drain-to-Source Voltage[1] Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage Single Pulse Avalanche Energy L=28mH, ID=3.6A Peak Diode Recovery dv/dt[3] Soldering Temperature Distance of 1.6mm from case for 10 seconds TJ and TSTG Operating and Storage Temperature Range FTU04N60 FTD04N60 600 3.6 3.6* Figure 3 Figure 6 89.3 0.71 ±30 181 4.5 300 -55 to 150 Unit V A W W/℃ V mJ V/ns ℃ *Drain Current limited by Maximum Junction Temperature.
