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FTD04N60 - 600V N-Channel MOSFET

Datasheet Summary

Features

  • ¾ Low ON Resistance ¾ Low Gate Charge (typical 14.7nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant/Lead Free FTU04N60/FTD04N60 BVDSS 600V RDS(ON) (Max. ) 2.8Ω ID 3.6A.

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Datasheet Details

Part number FTD04N60
Manufacturer ark
File Size 628.43 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FTD04N60 Datasheet
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Full PDF Text Transcription

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600V N-Channel MOSFET General Features ¾ Low ON Resistance ¾ Low Gate Charge (typical 14.7nC) ¾ Fast Switching ¾ 100% Avalanche Tested ¾ RoHS Compliant/Lead Free FTU04N60/FTD04N60 BVDSS 600V RDS(ON) (Max.) 2.8Ω ID 3.6A Applications ¾ High Efficiency SMPS ¾ Adaptor/Charger ¾ Active PFC ¾ LCD Panel Power Ordering Information Part Number Package FTU04N60 TO-251 FTD04N60 TO-252 Marking FTU04N60 FTD04N60 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL Parameter Drain-to-Source Voltage[1] Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage Single Pulse Avalanche Energy L=28mH, ID=3.
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