EM6112K800V Datasheet (eorex)

Part EM6112K800V
Description 512K x 8 LP SRAM
Manufacturer eorex
Size 308.09 KB
eorex

EM6112K800V Overview

Description

The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.

Key Features

  • Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2µA (TYP.)
  • Single 2.7V ~ 3.6V power supply
  • All inputs and outputs TTL compatible
  • Fully static operation
  • Tri-state output