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EM6112K800V - 512K x 8 LP SRAM

General Description

The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

Key Features

  • z Fast access time: 45/55/70ns z Low power consumption: Operating current: 40/30/20mA (TYP. ) Standby current: -L/-LL version 20/2µA (TYP. ) z Single 2.7V ~ 3.6V power supply z All inputs and outputs TTL compatible z Fully static operation z Tri-state output z Data retention voltage: 1.5V (MIN. ) z Package: 32-pin 450 mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA FUN.

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Datasheet Details

Part number EM6112K800V
Manufacturer eorex
File Size 308.09 KB
Description 512K x 8 LP SRAM
Datasheet download datasheet EM6112K800V Datasheet

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512Kx8 LP SRAM EM6112K800V Series GENERAL DESCRIPTION The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6112K800V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The EM6112K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES z Fast access time: 45/55/70ns z Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2µA (TYP.) z Single 2.7V ~ 3.