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CSD17311Q5 - N-Channel MOSFET

Datasheet Summary

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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Datasheet preview – CSD17311Q5

Datasheet Details

Part number CSD17311Q5
Manufacturer Texas Instruments
File Size 397.16 KB
Description N-Channel MOSFET
Datasheet download datasheet CSD17311Q5 Datasheet
Additional preview pages of the CSD17311Q5 datasheet.

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Full PDF Text Transcription

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CSD17311Q5 www.ti.com SLPS257A – MARCH 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples: CSD17311Q5 RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage - V FEATURES 1 •2 Optimized for 5V Gate Drive • Ultra Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Notebook Point-of-Load • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
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