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CSD17312Q5 Datasheet N-channel MOSFET

Manufacturer: Texas Instruments

Overview: CSD17312Q5 www.ti.com SLPS256A – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples: CSD17312Q5 RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage -.

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Top View S1 8D S2 7D 4 3.5 3 2.5 2 1.5 1 0.5 0 0 S3 G4 6D D 5D P0094-01 RDS(on) vs VGS ID = 35A TC = 125°C TC = 25°C 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage - V G006 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 28 Gate Charge Gate to Drain 6 Drain to Source On Resistance Threshold Voltage VGS = 3V VGS = 4.5V VGS = 8V 1.1 V nC nC 1.8 mΩ 1.4 mΩ 1.2 mΩ V ORDERING INFORMATION Device Package Media Qty CSD17312Q5 SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, Single Pulse ID = 130A, L = 0.1mH, RG = 25Ω VALUE 30 +10 / –8 100 38 200 3.2 UNIT V V A A A W –55 to 150 °C 845 mJ (1) Typical RqJA = 39°C/W when mounted on a 1-inch2 (6.45-cm2), 2-oz.

(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.

Key Features

  • 1.
  • 2 Optimized for 5V Gate Drive.
  • Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package.

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