CSD18532NQ5B
Features
- 1 Ultra-Low Qg and Qgd
- Low-Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- Ro HS pliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
VGS = 6 V VGS = 10 V
3.5 2.7
UNIT V n C n C mΩ
2 Applications
- DC-DC Conversion
- Secondary Side Synchronous Rectifier
- Isolated Converter Primary Side Switch
- Motor Control
3 Description
This 60-V, 2.7-mΩ, 5-mm × 6-mm SON Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3 G4
6D
5D
P0093-01
Device Information
DEVICE...
