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CSD18532NQ5B - N-Channel MOSFET

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General Description

This 60-V, 2.7-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Device Information DEVICE QTY MEDIA PACKAGE CSD18532NQ5B 2500 13-Inch Reel CSD18532NQ5BT 250 7-Inch Reel SON 5.00-mm × 6.00-mm Plastic Package SHIP Tape and Reel Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 60 ±20 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction Temperature, Tstg Storage Temperature EAS Avalanche Energy, Single Pulse ID = 85 A, L = 0.1 mH, RG = 25 Ω 151 21 400 3.1 156 –55 to 150 360 A A W °C mJ (1) Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.

(2) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

Overview

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18532NQ5B SLPS440C – JUNE 2013 – REVISED FEBRUARY 2018 CSD18532NQ5B 60-V N-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low-Thermal Resistance.
  • Avalanche Rated.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage.

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